Introduction to Nanoelectronics Topic – Resonant Tunnel Diode

نویسندگان

  • R. Krchnavek
  • Kalpesh Raval
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Spice Behavioral Model of Tunnel Diode: Simulation and Application

This paper provides an Analog Behavioral Model (ABM) in PSpice of a tunnel diode The PSpice parameters are implemented as separate parameterized blocks constructed from SPICE (ABM) controlled sources and extracted through experiment. A tunnel diode based oscillator is also proposed and simulated using circuit analysis software. The behavior of the tunnel diode is simulated and compared to the m...

متن کامل

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Related Articles Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach Appl. Phys. Lett. 100, 062403 (2012) Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing Appl. Phys. Lett. 100, 063504 (2012) Degenerate p-doping of InP nanowires for large area tunnel diodes Appl. Phys. Lett. 99, 25...

متن کامل

Spin diode based on Fe/MgO double tunnel junction.

We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...

متن کامل

Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended unpatterned magnetic pinned layer. However, the measured sensitivities are reduced below our es...

متن کامل

Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si=SiGe resonant interband tunnel diodes

The effect and influence of dry plasma etching processes of Si=SiGe using HBr for the formation of diode mesa structures has been investigated to minimise sidewall leakage current. To characterise sidewall damage electrically, Si-based resonant interband tunnel diodes (RITD) were processed and the completed RITDs compared by their peak-to-valley current ratio (PVCR) and valley current density (...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009